An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method
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摘要
The mathematical model of a semiconductor device is described by a system of three quasi-linear partial differential equations for initial boundary value problem. The electric potential is governed by an elliptic equation. The electron and hole concentrations are governed by two equations of convection-dominated diffusion type. Standard mixed finite element is used for the electric potential equation. A characteristics-mixed finite element method is presented for the concentration equations. This scheme conserves mass locally. In order to derive the optimal -norm error estimates, a post-processing step is included in the approximation to the scalar concentration. Numerical experiment is presented finally to validate the theoretical analysis.
论文关键词:Semiconductor device,Mixed finite element method,Characteristics-mixed finite element method,Post-processing step,Error estimates
论文评审过程:Available online 26 October 2013.
论文官网地址:https://doi.org/10.1016/j.amc.2013.09.067