Analysis on block-centered finite differences of numerical simulation of semiconductor device detector

摘要

A finite difference scheme on block-centered method is presented on nonuniform partition to simulate numerically three-dimensional transient problems of semiconductor detector of photoconduction. Applying the method of mixed finite element, the principle of duality, the induction hypothesis, the prior error theory of differential equations and other special techniques, we give error estimates of second-order accuracy in l2-norm. The numerical simulation is super-convergent for the electric field intensity, really important in actual applications.