Identification of contact regions in semiconductor transistors by level-set methods
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摘要
In this paper we present the formulation of level-set methods for the inverse problem of identifying an interface in the coefficient of an elliptic equation from a boundary measurement. This problem arises from the modeling of the identification of contact regions by boundary measurements for semiconductor transistors. We propose the Gauss–Newton direction as the interface velocity, and implement the scheme for a parameterized class of interfaces.
论文关键词:Inverse problem,Level-set methods,Semiconductor
论文评审过程:Received 12 March 2002, Revised 21 March 2003, Available online 9 September 2003.
论文官网地址:https://doi.org/10.1016/S0377-0427(03)00543-0