Numerical approximation of Turing patterns in electrodeposition by ADI methods
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In this paper we study the numerical approximation of Turing patterns corresponding to steady state solutions of a PDE system of reaction–diffusion equations modeling an electrodeposition process. We apply the Method of Lines (MOL) and describe the semi-discretization by high order finite differences in space given by the Extended Central Difference Formulas (ECDFs) that approximate Neumann boundary conditions (BCs) with the same accuracy. We introduce a test equation to describe the interplay between the diffusion and the reaction time scales. We present a stability analysis of a selection of time-integrators (IMEX 2-SBDF method, Crank–Nicolson (CN), Alternating Direction Implicit (ADI) method) for the test equation as well as for the Schnakenberg model, prototype of nonlinear reaction–diffusion systems with Turing patterns. Eventually, we apply the ADI-ECDF schemes to solve the electrodeposition model until the stationary patterns (spots & worms and only spots) are reached. We validate the model by comparison with experiments on Cu film growth by electrodeposition.
论文关键词:High order finite difference schemes,IMEX methods,ADI methods,Reaction–diffusion systems,Turing patterns,Schnakenberg model
论文评审过程:Received 21 December 2011, Revised 16 March 2012, Available online 23 March 2012.
论文官网地址:https://doi.org/10.1016/j.cam.2012.03.013