Continuation methods in semiconductor device simulation

摘要

Predictor-corrector continuation methods for characterizing the voltage-current (V, I) behavior of semiconductor devices are presented. Numerical simulations of some complex CMOS structures demonstrate the efficacy of continuation methods; in particular, it is possible to accurately determine the limit points of certain (V, I) curves, corresponding to latchup triggering and holding points. Continuation techniques, coupled with grid adaption, provide substantial improvement in computational efficiency over previous approaches and are well suited to deal with multivalued current responses.