Defect spatial pattern recognition using a hybrid SOM–SVM approach in semiconductor manufacturing

摘要

As manufacturing geometries continue to shrink and circuit performance increases, fast fault detection and semiconductor yield improvement is of increasing concern. Circuits must be controlled to reduce parametric yield loss, and the resulting circuits tested to guarantee that they meet specifications. In this paper, a hybrid approach that integrates the Self-Organizing Map and Support Vector Machine for wafer bin map classification is proposed. The log odds ratio test is employed as a spatial clustering measurement preprocessor to distinguish between the systematic and random wafer bin map distribution. After the smoothing step is performed on the wafer bin map, features such as co-occurrence matrix and moment invariants are extracted. The wafer bin maps are then clustered with the Self-Organizing Map using the aforementioned features. The Support Vector Machine is then applied to classify the wafer bin maps to identify the manufacturing defects. The proposed method can transform a large number of wafer bin maps into a small group of specific failure patterns and thus shorten the time and scope for troubleshooting to yield improvement. Real data on over 3000 wafers were applied to the proposed approach. The experimental results show that our approach can obtain over 90% classification accuracy and outperform back-propagation neural network.